FDMS8320L mosfet equivalent, mosfet.
* Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 32 A
* Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 27 A
* Advanced Package and Silicon combination for low rDS(on)
an.
* OringFET / Load Switching
* Synchronous Rectification
* DC-DC Conversion
Top Pin 1
Bottom
Pin 1
S S S .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charg.
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